DS_DNQ12SIP25_07172008
2
PRELIMINARY TECHNICAL SPECIFICATIONS
T
A
= 25°C, airflow rate = 300 LFM, V
in
= 10Vdc and 14Vdc, and nominal Vout unless otherwise noted.
PARAMETER NOTES and CONDITIONS DNQ12S0A0R25 (Standard)
Min. Typ. Max. Units
ABSOLUTE MAXIMUM RATINGS
Input Voltage (Continuous) -0.3 14 Vdc
Operating Temperature Refer to figure 24 for measuring point -40 125 °C
Storage Temperature -55 125 °C
INPUT CHARACTERISTICS
Operating Input Voltage 10.0 12.0 14.0 Vdc
Maximum Input Current Vin=10.0 to 14.0, Vo,set=5Vdc, Io=Io,max 14 Adc
Inrush Transient 1 A
2
s
Input Reflected Ripple Current (5Hz to 20MHz)
1µH source impedance; Vin,min to Vin,max, Io=Io,max ;
See Test configuration section
60 mAp-p
Input Ripple Rejection (120Hz) 50 dB
Recommended Input Fuse See Safety Considerations section 30 A
OUTPUT CHARACTERISTICS
Output Voltage Set-point Vin=Vin,min, Io=Io,max, T
A
=25°C -1.2 +1.2
% Vo,set
Output Voltage Adjustable Range Selected by an external resistor 0.7887 5.5 Vdc
Output Voltage Regulation
Over Line Vin=Vin,min to Vin,max 0.01 0.1 % Vo,set
Over Load Io=Io,min to Io,max 0.1 0.25 % Vo,set
Over Temperature
T
A
= T
A, min
to T
A, max
0.5 1.6 % Vo,set
Total Output Voltage Range
Over all operating input voltage, resistive load, and
temperature conditions until end of life
-3.0 +3.0 % Vo,set
Output Voltage Ripple and Noise
Cout=10µF tantalum//1µF ceramic capacitors
RMS (5Hz to 20MHz bandwidth) Vin=Vin,typ, Io=Io,min to Io,max 5
15
mVrms
Peak-to-Peak (5Hz to 20MHz bandwidth) Vin=Vin,typ, Io=Io,min to Io,max 15 50 mVp-p
External Capacitance
ESR ≧1mΩ
1000 µF
ESR ≧10mΩ at Vo,set=5Vdc
5,000 µF
ESR ≧10mΩ at Vo,set below 3.3Vdc
10,000 µF
Output Current 0 25 Adc
Output Current Limit Inception (Hiccup Mode) 150 200 % Io
Output Short-Circuit Current (Hiccup Mode)
Vo ≦ 250mV
1 Adc
Dynamic Load Response
dIo/dt=5A/µs, Vin=Vin,typ, T
A
=25°C,
Cout=10µF tantalum//1µF ceramic capacitors
Positive Step Change in Output Current Load change from 50% to 100% of Io,max 150 mV
Negative Step Change in Output Current Load change from 100% to 50% of Io,max 150 mV
Settling Time (Vo<10%peak deviation) 25 µs
EFFICIENCY
Vo,set =0.8V
Vin=Vin,typ, Io=Io,max, T
A
=25°C 79.0 %
Vo,set =1.2V Vin=Vin,typ, Io=Io,max, T
A
=25°C 84.7 %
Vo,set =1.5V Vin=Vin,typ, Io=Io,max, T
A
=25°C 87.3 %
Vo,set =1.8V Vin=Vin,typ, Io=Io,max, T
A
=25°C 88.9 %
Vo,set =2.0V Vin=Vin,typ, Io=Io,max, T
A
=25°C 89.7 %
Vo,set =2.5V Vin=Vin,typ, Io=Io,max, T
A
=25°C 91.4 %
Vo,set =3.3V Vin=Vin,typ, Io=Io,max, T
A
=25°C 93.1 %
Vo,set =5.0V Vin=Vin,typ, Io=Io,max, T
A
=25°C 95.1 %
FEATURE CHARACTERISTICS
Switching Frequency 500 kHz
SEQ/ENA Signal Interface
Logic High (SEQ/ENA pin open - Module Off)
SEQ/ENA Voltage Vin=Vin,min to Vin,max 3.5 14 V
SEQ/ENA Current Vin=Vin,min to Vin,max 0.5 2.33 mA
Logic Low (Module ON)
SEQ/ENA Voltage Vin=Vin,min to Vin,max 1.2 V
SEQ/ENA Current Vin=Vin,min to Vin,max 200 µA
Turn-On Transient Vin=Vin,typ, Io=Io,max
Turn-On delay Time, From remote On/Off From V
SEQ/ENA
=1.2V to Vo=10% of Vo,set 1 ms
Turn-On delay Time, From Input From Vin= Vin,min to Vo=10% of Vo,set 1 ms
Turn-On rise Time Time for Vo to rise from 10% to 90% of Vo,set 5 ms
Output Voltage Overshoot - Startup
Io=80% of Io,max, Vin=12Vdc, T
=25℃
0.1 0.5 % Vo,set
Output Overvoltage Protection (Latching) 5.7 6.0 6.3 V
Input Undervoltage Lockout
Turn-on Threshold 9.9 V
Turn-off Threshold 8.1 V
Remote Sense Range 0.5 V
GENERAL SPECIFICATIONS
MTBF
Io=80%Io, max, Ta=25℃
3.03 MHours
Weight 20 Grams
Over-Temperature Shutdown Refer to Figure 24 for the measuring point 130 °C
(1 pages)
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